Plasma etch reactors and methods of operating thereof.

摘要

The disclosure relates to a method of operating a plasma etch ractor, consisting of introducing a gas into the reactor (10) which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall (20) comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.