Process of making a capacitor in a semiconductor memory device

摘要

A process of making a capacitor in a semiconductor memory device provides photomasking processes which are reduced as all the stacked-disposable layers and the storage electrode node contact are patterned at the same time, and also an efficient area of the storage electrode node of a capacitor is maximized, and the process is simplified due to the formation of indented (fin-shaped) area by eliminating selectively the disposable layers which is stacked more than two time. The present invention provides a simple and time-saving process of making a capacitor in a semiconductor memory cell device.