Process for production of an integrated circuit

摘要

An integrated circuit is formed thereof a conductive wiring pattern. On the conductive wiring semiconductor layer is directly formed in a form of amorphous on the substrate. The amorphous semiconductor layer is annealed to form a polycrystalline structure while avoiding influence of annealing heat for the substrate. In the polycrystalline semiconductor layer is formed a semiconductor element, such as MOS transistor, MIS transistor, TFT and so forth. The semiconductor element is directly connected to the wiring pattern on the substrate.