| 摘要 |
PURPOSE:To focus a pattern on a region, on which the user wishes to focus it most accurately within the shot region of an object to be exposed on a wafer, in conformity with the imaging face of a projection optical system. CONSTITUTION:The focus position of a shot center is determined by projecting a slit pattern image 49 on the shot center of the exposure shot 48 on a wafer from a focus position detection system. The pattern of a reticle is formed on an exposure shot 48 by scanning a slit pattern image 52 along a measure line 51, which passes the region 50 where a user wishes to focus the pattern image, in the condition that the focus position is locked, thereby founding the offset DELTAFof between the focus position in the region 50 and the focus position at the shot center, and correcting the offset DELTAFof, and operating an autofocus mechanism. |
