| 摘要 |
PURPOSE:To make the capacitance higher without increasing the occupied area of a semiconductor chip and also without increasing the size of an element. CONSTITUTION:A groove M, reaching a diffusion region 2 from a lower conductive film 4, is formed, the surface of the groove is covered by an insulating film 10 to be used for a capacitor, and a capacitor structure, in which the lower conductive film 4 is pinched by the upper conductive film 5 and the diffusion region 2, is formed. |
