发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To reduce the load for a bit line and to relax a condition for restricting an area of layout in a semiconductor memory having hierarchical bit line structure. CONSTITUTION:Main bit lines MBL and ZMBL are arranged at both sides of a sense amplifier SA. One main bit lines MBL and ZMBL are provided for sub-bit lines SBL1, SBL2 and SBL3, SBL4 making a pair respectively. A sub-bit line pair of SBL1, SBL2 is connected to the main bit line MBL through a block selecting switch T1. A sub-bit line pair of SBL3, SBL4 is connected to the main bit line ZMBL through a block selecting switch T2. Since one bit line is provide for two sub-bit lines, a pitch of the main bit line is made two times as much as the sub-bit line, a condition for a pitch of the main bit line is largely relaxed, layout of elements can be made easy.
申请公布号 JPH07111083(A) 申请公布日期 1995.04.25
申请号 JP19930323805 申请日期 1993.12.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 TOMISHIMA SHIGEKI;TSUKIDE MASAKI;ASAKURA MIKIO;FUJISHIMA KAZUYASU
分类号 G11C11/401;G11C7/18;G11C11/4096;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/401
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