| 摘要 |
PURPOSE:To attain a good electric characteristic by depositing a PZT thin film on a high-temp. substrate, etching the surface to remove the Pb-excess layer, keeping the film at a high temp. to re-evaporize Pb and eliminating a Pb-excess region from the vicinity of the PZT thin film surface. CONSTITUTION:A Pb-excess PZT sintered target 26 is used, a substrate 25 is heated to 600-650 deg.C, a gaseous mixture of argon and oxygen is introduced to control the pressure to 0.5-4 Pa, a high-frequency power of 150W is applied on the target 26, and a PZT thin film is deposited on the substrate 25. The thin film is then cooled to room temp., a high-frequency bias is impressed on the substrate 25 to etch the PZT thin film, and the surface layer is removed to a depth of at least about 20nm. Otherwise, the PZT thin film is deposited, a shutter 40 is closed, and the substrate is kept at the same temp. for 20min in the same gas atmosphere while continuing discharge. Consequently, Pb is re-evaporized from the film surface, and a Pb-excess layer is not formed. |
