| 摘要 |
<p>PURPOSE: To prevent the occurrence of the cracking or the sliding lines in an HgCdTe substrate, by performing the mutual diffusion of a II-VI group semiconductor and an inactive layer only at the interface of a semiconductor wafer and the inactive layer in the unmasked region. CONSTITUTION: A CdTe inactive layer 13 is arranged on a HgCdTe wafer. Then, a ZnS layer 15 is deposited, an Al layer 17 is provided, a photoresist layer 19 is rotatably attached to the surface of the Al layer 17, and the pattern is formed. The Al in the region, wherein the mutual diffusion is performed, is exposed. Then, the exposed Al 17 is etched and removed, and the remaining photoresist is removed. Thereafter, the heat source or the light source is directed to the surface of the detector circuit. Thus, the heat or the optical energy 21 is reflected from the Al layer 17, and the mutual diffusion at the interface of the CdTe 13 and the HgCdTe is performed.</p> |
