| 摘要 |
<p>PURPOSE:To form a uniform film on the surface of a film forming substrate by a vapor phase growth apparatus to which a susceptor in which the film forming substrate is incorporated is attached movably vertically and in which the susceptor is heated to form the film by a method wherein the susceptor is supported from below. CONSTITUTION:A film forming substrate 1 is attached to a susceptor 2 which is supported from below by a vertically movable pillar 13 at its center part. The film forming substrate 1 and the susceptor 2 are heated by a heater 3 and, while a pillar 13 is at an elevated position, the film forming substrate 1 is replaced through a gate valve 14. Or, after the susceptor 2 on which a substrate on which a film is not formed is placed onto the upper part of the pillar 13, the susceptor 2 is made to descend to a required position to form a film. By this constitution, the pillar 13 can be driven to rotate around a shaft while the airtightness of a reaction chamber 4 is maintained, so that the thickness of the film formed on the substrate can be uniform.</p> |
