发明名称 Process for the manufacture of integrated capacitive transducers
摘要 The process notably consists of assembling by welding by means of a connecting layer (16) a first (10) and a second substrate (12) of a semiconductor material, of thinning the second substrate (12) and, for each of the transducers, of structuring this second thinned substrate (12) to form a network of orifices (24) and of defining the contour of the fixed electrode of the transducer, of etching the first substrate (10) to form the diaphragm (28) of the transducer, and of eliminating the part of the connecting layer (16) which is located between the diaphragm (28) and the network of orifices (24) to separate this diaphragm (28) from the fixed electrode. The invention has applications in the manufacture of transducers such as microphones.
申请公布号 US5408731(A) 申请公布日期 1995.04.25
申请号 US19930147998 申请日期 1993.11.05
申请人 CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE S.A. - RECHERE ET DEVELOPPEMENT 发明人 BERGGVIST, JOHAN W.;RUDOLF, FELIX
分类号 G01L9/00;H04R19/00;H04R25/00;H04R31/00;(IPC1-7):H01G7/00 主分类号 G01L9/00
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