| 发明名称 |
PECVD process for forming BPSG with low flow temperature |
| 摘要 |
A method of forming a BPSG film in a PECVD reactor with ratios of P2O3/P2O5 such that the film flows at low temperature in a non-oxidizing ambient and produces a reduced number of particulates. The method permits tailoring of the wall angle of a BPSG film by controlling the P2O3/P2O5 ratio.
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| 申请公布号 |
US5409743(A) |
申请公布日期 |
1995.04.25 |
| 申请号 |
US19930062658 |
申请日期 |
1993.05.14 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOUFFARD, MARK D.;KING, WILLIAM J.;MARTIN, CHERYL M. |
| 分类号 |
C23C16/50;C23C16/40;C23C16/56;H01L21/205;H01L21/31;H01L21/316;(IPC1-7):B05D3/06;C23C16/00;H01L21/02;C03C15/00 |
主分类号 |
C23C16/50 |
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