| 摘要 |
1,254,365. Semi - conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 1 Dec., 1969 [2 Dec., 1968], No. 58524/69. Heading H1K. A semi-conductor wafer 1 provided on one surface with conducting beam leads 4 connected to electrodes of semi-conductor components in that surface is divided by cutting channels 7 partially through the wafer from its opposite surface and then etching without the use of a mask to separate the various components. The sawing may be carried out using a diamond or wire gang saw, and the non-selective etchant may, for a Si wafer, be a spray of HF, HCl and/or HNO 3 . The beam leads 4 may comprise layers of Ti, Pt and Au, the Au layer being relatively thick and applied by electrodeposition. The semi-conductor components may be individual planar transistors or may remain interconnected by the beam leads 4. |
