| 摘要 |
PURPOSE:To provide a method of manufacture of a thin film of a ferroelectric substance which has uniform crystal grain sizes and has no phases formed therein that are different from a perovskite phase. CONSTITUTION:A thin film of crystallites of lead zirconate titanate is formed on a silicon substrate which is held at 350 deg.C to 450 deg.C, and the thin film of crystallites is heat treated at 700 deg.C for about 10 minutes for crystallization. Sputtering is utilized to form the thin film of lead zirconate titanate in a crystallitic state, at which time the temperature of the substrate is 350 deg.C to 450 deg.C. |
