发明名称 |
Method of producing a semiconductor device by forming contacts after flowing a glass layer |
摘要 |
A method of producing a semiconductor device comprising a bipolar transistor and a MOSFET (e.g., a Bi-MOS device), comprising the steps of: forming an insulating layer on an epitaxial silicon layer on a semiconductor substrate; forming a gate electrode; forming a base region; forming a PSG (an impurity containing glass) layer on the whole surface; carrying out a heat-treatment on the PSG to cause a softening and flow thereof (sloping ends of and flattening the PSG layer); opening collector, emitter, source and drain contact windows in the PSG layer and the insulating layer; forming a doped polysilicon layer over the contact windows with the formation of an emitter region; opening a base contact window; and forming metal (Al) electrodes.
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申请公布号 |
US5409843(A) |
申请公布日期 |
1995.04.25 |
申请号 |
US19920933584 |
申请日期 |
1992.08.24 |
申请人 |
FUJITSU, LTD. |
发明人 |
YAMAUCHI, TUNENORI;WAKUI, YOJI |
分类号 |
H01L29/73;H01L21/28;H01L21/3105;H01L21/331;H01L21/60;H01L21/8249;H01L29/732;(IPC1-7):H01L21/265;H01L29/70 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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