| 摘要 |
The infrared sensor integral with filter is characterized by the structure where an oxide silicon layer (2), a nitride silicon layer (3), a buffer layer (4) and a lower electrode (5) is formed on the upper part of a silicon substrate (1), the oxide silicon layer (2) of lower part of the silicon substrate (1) is anisotropically etched so as to form a sensor chip undone off the layer, a silicon substrate (1') of a filter and the lower oxide silicon layer (2') are anisotropically etched so as to make an isolated thin film (8) in contact with the sensor chip, and a lead line (9) is formed in an upper and lower electrodes (7) and (5).
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