| 摘要 |
<p>texturization etching p-type silicon wafer(1) with KOH solution; forming an n+-type diffusion layer(2) in the front side of the p-type silicon wafer and a p+-type BSF(3) in the back side; forming a front electrode(4) and a back electrode(5) in the n+-type diffusion layer(2) and the p+-type BSF(3), respectively; and forming a double refraction passivation layer(ARC) on the surface of the n+-type diffusion layer(2) and the front electrode(4).</p> |
