| 摘要 |
<p>PURPOSE:To prevent the disconnection of gate and auxiliary capacitance Al wirings by coating the gate and auxiliary capacitance Al wirings with a resist film and allowing a-Si, etc., to remain in an island form by pattern formation on a gate insulating film corresponding to regions where anodic oxidation is not executed at the time of anodically oxidizing the gate and auxiliary capacitance Al wirings. CONSTITUTION:The resist film of a substrate is removed and thereafter, for example, SiNx is laminated as the gate insulating film 17 over the entire surface by a plasma CVD method, then a-Si 18 and SiNx are successively laminated thereon. The SiNx of the uppermost layer exclusive of the parts corresponding to the gate electrodes and the parts corresponding to the regions where the Al is exposed without being coated with Al2O3 at the time of the anodic oxidation is removed by etching and the etching stoppers 19 and the SiNx film 19 LN left in the island form are formed respectively. Namely, the laminates 19 LN formed in the island form are made to remain without being etched away for the purpose of admitting the etchant from the defects of the gate films 17 at the time of patterning the a-Si, etc.</p> |
