| 摘要 |
<p>PURPOSE:To manufacture the MIM type nonlinear element having uniform electrical characteristics by controlling the atomic ratio of oxygen to tantalum in the metal oxide film to a value in a specified range. CONSTITUTION:As for the elements in the metal oxide film 13, the ratio of oxygen (O) to tantalum (Ta) is <2.5 O/Ta at the time of anodically oxidizing the first metallic film 12 with a chemical conversion solution obtained by dissolving a solute into alcohol used as the solvent, differently from that of >2.5 O/Ta at the time of performing the above anodic oxidation wherein water is used as the solvent. At the time of adjusting the ratio of oxygen to tantalum to <2.5, O/Ta, the steepness of the voltage-current characteristics is increased. Accordingly, the metal oxide film 13 is preferably formed by anodically oxidizing the first matallic film 12 with a solution obtained by dissolving a suitable solute into an alcohol solvent. At this time, the MIM type nonlinear element which is capable of driving the liquid crystal may be provided even by adopting the double-layered wiring with Al as the first metallic film 12, that is concurrently used as the scanning line, and lowering its electric resistance.</p> |
