| 摘要 |
<p>PURPOSE:To make a semiconductor device thin by a method wherein a means for heat dissipation is integrated with a means for electric-signal transfer. CONSTITUTION:A recessed part 14 is formed so as to be faced downward in the central part of a lead frame 13, and an IC chip 15 as a semiconductor element is housed in the recessed part 14. In addition, the lead frame 13 is provided with four terminal parts 16, and the terminal parts 16 are extended to four directions at an interval of 90 deg.. Then, the terminal parts 16 protrude to the outside from individual side faces of a package 12, and they are bent and worked to be a gull wing shape. The lead frame 13 has a three-layer structure, and it is constituted of a heat conduction layer 17, an insulating layer 18 and an electric-signal transfer layer 19. In addition, the lead frame 13 uses the heat conduction layer 17 as the uppermost layer and the electric-signal transfer layer 19 as the lowermost layer. Since a means for heat dissipation and a means for electric-signal transfer are integrated, a semiconductor device can be made thin.</p> |
