| 摘要 |
<p>PURPOSE:To provide a semiconductor flow sensor wherein structure strength is improved by forming an isolation layer and a resistance layer from the same material as a silicon substrate, and characteristics of a flow sensor such as sensitivity and response can be improved by a heating process or the like. CONSTITUTION:An N-type isolation layer 41 and a P<+> type resistance layer are formed in order or laminated in order on a silicon (100) substrate 10 of a P-type layer, by either one of an epitaxial growth method or an ion implantation method. The structure strength of a semiconductor flow sensor is improved. The resistance layer is patterned to be a heater 20, a resistance temperature sensor 30, and an etching mask 40. Etching holes 11 are formed in the silicon (100) substrate 10 and the isolation layer 41. Thereby the heater 20 and the resistance temperature 30 are thermally and electrically insulated from the silicon (100) substrate 10, and the flow rate or the flow velocity of gas is measured.</p> |
