| 摘要 |
<p>PURPOSE:To enable high efficiency plasma treatment by concentrating plasma, when plasma is generated at a low pressure with a high frequency antenna, and treatment is performed by using the plasma. CONSTITUTION:A high frequency antenna 7 constituted of a spiral coil is arranged on the outside of the upper surface of an airtight structure chamber 2, and plasma is generated by forming an electromagnetic field in the chamber 2 by applying a high frequency current to the antenna 7. On the other hand, a focus ring 6 composed of an insulative material like ceramic is arranged on the mounting stand 3 of a wafer W so as to surround the semiconductor wafer W. The ring 6 is so formed that the upper surface becomes higher from the inside to the outside, which is higher than the surface of the wafer W. Thereby the plasma is concentrated and flatness of the lower surface of plasma in the peripheral part of the wafer W is improved.</p> |
