| 摘要 |
<p>PURPOSE:To that is very dense and has smaller number of pin holes compared to a SiO2 film formed by sputtering or CVD, by forming the SiO2 film as the upper layer of a two-layer structure of a protective film for the substrate and using different materials or methods to form these two layers. CONSTITUTION:A TFT substrate is produced in the following method. A gate electrode (Ta) 4 is formed by sputtering and subjected to dry etching. Further, a gate insulating film (SiNx) 5, intrinsic semiconductor (amorphous silicon film) 6 in the channel area, n-type semiconductor film (amorphous silicon film) 8 in the contact area, source electrode (Ti) 9, drain electrode (Ti) 10, picture element electrode (transparent electrode) 11, and protective insulating film (SiNx) 12 are formed by CVD method and subjected to wet etching for patterning. In this process, a Ta2O5 film is formed as a protective film 2 for the glass substrate to prevent damages against the glass substrate 1 due to wet etching. Further, a SiO2 film is formed as a protective film 3 for the glass substrate by LPD method to prevent damages against the protective film 2 and the glass substrate 1.</p> |
