| 摘要 |
PURPOSE:To provide a method for fabricating a photoelectric converter, in which a single crystal Si substrate having texture grooves comes at least into point contact with an Si based semiconductor layer forming a p-n junction therewith, conveniently with decreased number of steps.. CONSTITUTION:A thin film 2 of silicon oxide is deposited, by sputtering, on the surface of a single crystal Si substrate 1 provided with etch pits 10 constituting texture grooves. The silicon oxide thin film is then etched using an etching agent of HF to dissolve and remove the silicon oxide thin film 22 selectively from the ridge and valley parts having inferior film quality to the thin film deposited on the slope of etch pit thus leaving the silicon oxide film sparsely on the substrate. Subsequently, an amorphous Si layer (Si based semiconductor layer) is deposited thus fabricating a deposition solar cell (photoelectric converter) where the Si based semiconductor layer has point junctions with the substrate. |
