| 摘要 |
The resistance in semiconductor device is prepared by (a) growing a 1st insulation film on the semiconductor substrate and forming a 2nd insulation film with an island shape on the resistance region, (b) forming the ring type polysilicon side wall in the 2nd insulation film side wall, (c) removing a certain part of polysilicon side wall and making the shape of this side wall to C letter type, (d) depositing the 3rd insulation film on all surface of the substrate and forming the contact holes at both ends of polysilicon sidewall, and the conductor on it.
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