| 摘要 |
<p>PURPOSE:To make it possible to fully respond to finer intervals of semiconductor element wiring and to form an electrically conductive path in a high-density array shape by realizing three-dimensional high-density mounting of diversified semiconductor elements by laminating thin type semiconductor devices housing semiconductor elements in recessed portions and also by multi-layer conductor circuits by inserting conductor circuits to the electrically conductive paths. CONSTITUTION:This is a multilayer structure semiconductor device T laminated on an external substrate 1 with two or more semiconductor devices H mounting a semiconductor element S in a recessed portion 5 placed on an insulation substrate 3, and semiconductor elements of each semiconductor device and terminals of the external substrate are respectively made conductive through one or more of electrically conductive paths D1, D2, D3 and D4 provided inside the insulation substrate 3. Moreover, the tip of the conductive path of the semiconductor device is made as a bump electrode, the electrical connection are made more reliable between the semiconductor and the conductive path, between semiconductor devices and between semiconductor device and external substrate.</p> |
