| 摘要 |
PURPOSE: To increase a position error tolerance for the active region of a contact hole position by forming a first side wall spacer when forming a contact hole for linking a node electrode to a silicon substrate and forming the contact hole by utilizing the side wall spacer. CONSTITUTION: A first side wall spacer 37 is formed at parts that face each hole (a) of a polycrystalline silicon film 35 for an upper-layer node electrode, a silicon oxide film 34, and a polycrystalline silicon film 33 for a lower-layer node electrode. Then, a hole surrounded by the first side wall spacer 37 is utilized and anisotropic etching is performed to a silicon nitride film 32 and a first insulation film 31. Then, a contact hole (b) for making connection to an element that is located at the lower part of the first insulation film 31 is formed, thus increasing a position error tolerance for an active region. |
