| 摘要 |
<p>PURPOSE:To provide a method of forming resist patterns, which can easily obtain the resist patterns having a fine form and a vertical sectional form. CONSTITUTION:A resist film 2, which senses to an energy beam 1, is formed on a substrate, the energy beam 1 of the form of a pattern is emitted on the film 2, X-ray absorbing molecules 4 having an absorption coefficient larger than that of the film 2 to X-rays of a desired wavelength are selectively introduced in emitted parts of the film 2 and the film 2 is subjected to entire surface exposure with these X-rays 6 of the desired wavelength and is developed to obtain resist patterns 7. There are both the case where the molecules 4 are introduced in the emitted parts of the film 2 and the case where the molecules 4 are introduced in the non-emitted part of the film 2.</p> |
