| 摘要 |
<p>PURPOSE: To provide a film formation method for forming SIN film(silicon nitride film) or SION film(silicon oxide nitride film) where an etching speed can be selected at a low temperature, carbon content is low, and step coverage is appropriate. CONSTITUTION: SiH4 , NH3 , and N2 are introduced from a pipe 61 and at the same time NMDS is introduced from a pipe 62 and a reaction gas consisting of HMDS, SiH4 , NH3 , and N2 with 5 Torr is introduced into a reaction container 1 via the pipe. At this time, the temperature of a substrate is controlled to 300-450 deg.C by a heater 7 and a high-frequency power is applied with 0.02 W/cm<2> from high-frequency oscillation sources 8 and 10. Plasma is generated in the reaction container 1, a mixture gas is excited due to the plasma discharge energy, a chemical connection is decomposed, and a reaction product based on the active particles is deposited on a substrate 5 as an atom or molecule radical, thus forming an SIN film on the substrate.</p> |
