| 摘要 |
PURPOSE:To prevent the intervention of a natural oxide film or the mixing of particles, in a thin film like an SiO2/Si3N4 film which is used as, e.g. a multilayered insulating film of a DRAM. CONSTITUTION:In a reaction tube 2 having a double tube structure constituted of an inner tube 2a and an outer tube 2a, the inside of the reaction tube 2 is maintained in a specified state of reduced pressure while, e.g. SiH2Cl2 gas and NH3 gas are made to flow from the inside of the inner tube 2a to the outside with a first gas suppling tube 4 and a discharging tube 5, and an Si3N4 film is formed on the surface of a wafer W at a temperature of 780 deg.C. The temperature of the inside of the reaction tube 2 is raised up to about 1000 deg.C, and H2O gas and HCl gas are made to flow from the outside of the inner tube 2a to the inside with a second gas suppling tube 6 and a discharging tube 7. An SiO2 film is formed by oxidizing the surface of the Si3N4 film in the state of normal pressure. |
