| 摘要 |
PURPOSE:To provide a semiconductor device having local wirings highly reliable and easy to form. CONSTITUTION:Over the main surface of a p type silicon substrate 1 formed are n type impurity regions 5b and 5c with a space in between. Over a region between the n type impurity regions 5c and 5b formed is a gate electrode 4b via a gate insulating film 3b. A titanium silicide layer 7 is formed extending from a surface layer of the gate electrode 4 to a surface layer part of the n type impurity region 5c. This titanium silicide layer 7 sewes as a local wiring. On the side wall of the gate electrode 4b where this titanium silicide layer 7 is not formed, a sidewall insulating film 6 remains.
|
