发明名称 FILM FORMING EQUIPMENT AND FORMING METHOD
摘要 PURPOSE:To obtain a TaO film wherein generation of foreign matter and decrease of film thickness reproducibility are prevented and composition is constant from the initial film formation, by eliminating a low temperature region in the whole region until Ta source reaches a substrate to be processed, and preventing the Ta source itself from being adsorbed and liqufied. CONSTITUTION:The bypass piping 510 of Ta source is vacuumized by a vacuum pump 511 installed differently from a pump for vacuumizing a reaction pipe. Oxygen supplied as oxidizing agent is connected with a furnace port seal part door 505 by a heat piping 508 through a detachable joint 507. A boat convey mechanism 501 is not installed on gas supply side but on vacuum exhaust system side. The vacuum exhaust system is accommodated in an exhaust box or the like, and the influence of dust generated from a pump can be evaded. A gas detector 513 is installed in a furnace depth seal part via a valve 512. In the state of atmospheric pressure before a door is opened, the valve 512 is opened, and whether the residual component of Ta source is present can be detected.
申请公布号 JPH07106322(A) 申请公布日期 1995.04.21
申请号 JP19930249074 申请日期 1993.10.05
申请人 HITACHI LTD 发明人 IIJIMA SHINPEI;SUGAWARA YASUHIRO
分类号 H01L27/04;H01L21/31;H01L21/316;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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