PROCEDIMENTO PER LA LAVORAZIONE DI WAFER SOTTILI E CELLE SOLARI DI SILICIO CRISTALLINO

摘要

The method involves processing a thin semiconductor wafer (1) to produce a curved form. In an initial stage, a protective layer (2), e.g. an organic polymer, is formed on both surfaces. The polymer may be provided in the form of a paste that is pressed onto the surface. The laminated shape is formed to the surface of a carrier (4) and can be bonded into position using a thermoplastic adhesive foil (3).