发明名称 PSEUDOMORPHIC SUBSTRATES
摘要 High quality epitaxial layers (16) can be grown on a multi-layer substrate (10) which has a crystalline pseudomorphic layer (12) with an exposed surface used for the epitaxial growth. The pseudomorphic layer (12) of the substrate (10) has a thickness at or below the pseudomorphic limit so it will be deformed as stress forces are developed during epitaxial growth of heteroepitaxial structures. A plastically deformable layer (14) is bonded to the pseudomorphic layer (12). This plastically deformable layer (14) is made of material that plastically flows at epitaxial growth temperatures.
申请公布号 WO9510410(A1) 申请公布日期 1995.04.20
申请号 WO1994US11537 申请日期 1994.10.12
申请人 INTEVAC, INC. 发明人 GREEN, ROGER, T.;DAVIS, GARY, A.;AEBI, VERLE, W.
分类号 C30B25/02;C30B25/18;(IPC1-7):B32B3/00;C30B21/00 主分类号 C30B25/02
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