发明名称 Phase-shifting mask and production method therefor
摘要 A phase-shifting mask according to the present invention has a crystal substrate (quartz substrate) (1) which transmits exposure light, a transmitting layer (10), of predetermined transmittance, which is formed on the main surface of the crystal substrate (1), a light-transmitting section (7) through which the crystal substrate (1) is exposed in a predetermined region, and a phase-shifting section (4) which is formed from a single material on the light-transmitting layer (10) and which shifts the phase angle through approximately 180 DEG and has a transmittance of 3-20% with respect to the exposure light transmitted through the light-transmitting section (7). One result is, that a defect produced in the phase-shifting section can be detected by means of an ordinary defect-checking device without disturbing the phase-shifting section as a phase-shifting mask. <IMAGE>
申请公布号 DE4435773(A1) 申请公布日期 1995.04.20
申请号 DE19944435773 申请日期 1994.10.06
申请人 DAINIPPON PRINTING CO., LTD., TOKIO/TOKYO, JP;ULVAC COATING CORP., CHICHIBU, SAITAMA, JP;MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 ISAO, AKIHIKO, CHICHIBU, SAITAMA, JP;KAWADA, SUSUMU, CHICHIBU, SAITAMA, JP;YOSHIOKA, NOBUYUKI, ITAMI, HYOGO, JP
分类号 G03F1/00;(IPC1-7):G03F1/00 主分类号 G03F1/00
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