PROCESS FOR THE ANISOTROPIC ETCHING OF MONOCRYSTALLINE MATERIALS

摘要

The invention relates to a process for the anisotropic etching of monocrystalline materials. Whereas additional steps are required in prior art etching processes in order first to determine the exact position of the crystal axes along which the etching mask is directed, their precise determination is unnecessary in the process of the invention. To this end a mask is produced, the aperture area of which is smaller than the basic area on the mask side of the recess to be made. The mask has notches at the edges which are directed outwardly form the mask aperture. The depths of the notches are such that the crystal planes forming the sidewalls of the subsequent recess or boundary surfaces of intermediate structures are established only by their end points. The process is applicable especially to the production of micromechanical components with close tolerances.