| 摘要 |
<p>The pattern of a reticle having a fine pattern which is finer than the resolution of a stepper or a fine line pattern whose lines are separated from each other by distances shorter than the resolution of the stepper is transferred to various areas of the surface of a wafer, and the size of the pattern is measured. Consequently the best focusing position (in-focus wafer position) can be easily determined.</p> |
