| 摘要 |
PURPOSE:To detect pinhole easily by magnifying and transferring onto the base thin film, by forming the base thin film having a faster etching speed in a specific etching solution on the substrate, depositing a thin film being measured thereon, and processing in the specific etching solution. CONSTITUTION:An oxide film 2 is deposited on the surface of a silicon wafer 1 as the base then film. A thin silicon nitride film 3 having pinhole 4 to be measured is deposited on the oxide film 2. The silicon wafer 1 is dipped in a hydrofluoric acid buffer solution to be etched. Then, the hydrofluoric acid buffer solution penetrates through the pinhole 4 in the silicon nitride film 3 to run into the surface of the base thin film 2. Since the etching speed of the hydrofluoric acid buffer solution to the base thin film 2 is evey high, the part just beneath the pinhole 4 is etched in a large size. The thin film measured is removed by using phosphoric acid, and the number and positions of the pinholes thus transferred on the thin film 2 are measured. |
