RAMAN SPECTROSCOPIC ANALYSIS OF DAMAGES IN SEMICONDUCTORS

摘要

III-V semiconductor dot samples (particularly GaAs) have been studied with Raman microscopy. The samples were fabricated by electron beam lithography and dry etching. The non-resonant Raman scattering can provide direct information on the structure alteration and associated phonon bands. In particular, a previously unknown Raman line at 242cm<-1> is attributed to a non-allowed phonon caused by damage. Direct Raman imaging in this band can reveal the damaged portions of the sample.