| 摘要 |
PURPOSE:To facilitate manufacture by constituting diffraction grating structure by a superlattice structure region and a non-superlattice structure region formed through the implantation of impurity ions to superlattice structure. CONSTITUTION:A buffer layer 5, a clad layer 6, an active layer 1, an optical leaking-out layer 3 and a superlattice layer 7 are grown on a GaAs substrate crystal 4 through a molecular-beam crystal growth method in succession. Si is implanted to the superlattice layer 7 while keeping regular intervals to shape impurity implanting regions 16, and an impurity is also implanted similarly to regions 17 on both sides while leaving a central diffraction grating to a striped shape. The impurity is implanted in high concentration to a position as a boundary on a substrate to form a high ion-implanting region 12. Consequently, a non-superlattice structure region is shaped, a P-type AlGaAs layer 8 and a P-type GaAs layer 9 are crystal-grown continuously on the non- superlattice structure region under a high vacuum, and lastly a metal is evaporated onto an uppermost layer to form an electrode 13. Accordingly, a fine diffraction grating can be manufactured precisely and easily. |
