High power, single-frequency tunable laser.

摘要

A monolithically integrated laser comprises a frequency router formed in a semiconductive wafer defining a tuned cavity. A control circuit applies electrical energy to predetermined controllably transmissive waveguides connecting the frequency routing device with reflective elements defined in the wafer. This tunes the laser to a desired one of a number of optical frequencies. Application of such electrical energy creates frequency selective pathways through the wafer able to support selected lasing frequencies. Additional optical amplifiers are formed in the frequency router to create lasing action in a preselected pathway.