| 摘要 |
PURPOSE:To prevent reduction in capacity attributable to such a transition layer as an SiOx layer by a method wherein a conductive nitrogen compound film is formed on the top surface of a silicon substrate and then an insulating metal oxide film is formed thereon. CONSTITUTION:An insulating film 2 is selectively formed on a silicon substrate 1, and then a high concentration impurity region 3 is formed. Next, a conductive nitrogen compound film 4 is formed by sputtering, to be subjected to selective etching for the retention of some of the film 4 in a specified region. An insulating metal oxide film 5 is formed by sputtering on the film 4, on which oxide film 5 an electrode 6 is formed in a specified region. The result is a structure wherein a capacitor is constituted of the film 4 serving as the lower electrode, the film 5 serving as a dielectric film, and the electrode 6 as the upper electrode. With an insulating metal oxide film being formed after the formation of a conductive nitrogen compound film, such a transition layer as an SiOx film is not to be formed, which prevents capacity from reduction. |
