发明名称 |
POSITIVE ELECTRON-BEAM RESIST COMPOSITION AND DEVELOPER FOR POSITIVE ELECTRON-BEAM RESIST. |
摘要 |
<p>A positive electron-beam resist composition comprising a cresol novolak resin, a low-molecular additive with a specified structure, and a quinone diazide compound with a specified structure; and a developer for positive electron-beam resist containing an alkali metal ion, a weak acid radical ion, and a water-soluble organic compound each in a specified amount. The invention resist composition is excellent in dry etching resistance and resolution, and can provide fine patterns at a high sensitivity especially when the invention developer is used.</p> |
申请公布号 |
EP0649061(A1) |
申请公布日期 |
1995.04.19 |
申请号 |
EP19940914572 |
申请日期 |
1994.04.28 |
申请人 |
TORAY INDUSTRIES, INC. |
发明人 |
OOSEDO, HIROKI;KANETSUKI, SHIGEYOSHI;TAMURA, KAZUTAKA;ASANO, MASAYA;KATAOKA, MUTSUO +DI |
分类号 |
G03F7/022;G03F7/20;G03F7/32;(IPC1-7):G03F7/039 |
主分类号 |
G03F7/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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