发明名称 |
Apparatus for producing silicon single crystal grown by the Czochralski method. |
摘要 |
An apparatus (2) for producing a silicon single crystal (28) grown by the Czochralski method includes a main chamber (6) having a round soulder (6b) interconnecting the upper end of a side wall (6a) and the lower end of a neck (4) of the main chamber (6). The round shoulder (6b) has an inside surface (6c) so profiled as to form a portion of the periphery of an ellipse (E) drawn about two foci (F1, F2) which are composed of the upper end of a heater (16) and a point of the longitudinal axis of a silicon single crystal (28) being grown. The inside surface (6c) has a low emissivity. With the apparatus (2) thus constructed, a silicon single crystal (28) having a high dielectric breakdown strength of oxide film (SiO2) can be produced in a stable manner with high yield and productivity. <IMAGE> |
申请公布号 |
EP0648867(A1) |
申请公布日期 |
1995.04.19 |
申请号 |
EP19940112928 |
申请日期 |
1994.08.18 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
TAKANO, KIYOTAKA;FUSEGAWA, IZUMI, HARANAKA CO. FLAT 308;YAMAGISHI, HIROTOSHI |
分类号 |
C30B15/00;C30B15/14;C30B29/06;H01L21/208 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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