| 发明名称 |
Method of manufacturing an ohmic electrode having a multi-layered structure. |
| 摘要 |
<p>An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n<+>-type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300 DEG C for 30 minutes and next at, e.g. 650 DEG C for one second to fabricate an ohmic electrode. <IMAGE></p> |
| 申请公布号 |
EP0649167(A2) |
申请公布日期 |
1995.04.19 |
| 申请号 |
EP19940114616 |
申请日期 |
1994.09.16 |
| 申请人 |
SONY CORPORATION |
发明人 |
UCHIBORI, CHIHIRO, C/O FACULTY OF ENGINEERING;MURAKAMI, MASANORI, C/O FACULTY OF ENGINEERING;OTSUKI, AKIRA, C/O FACULTY OF ENGINEERING;OKU, TAKEO, C/O FACULTY OF ENGINEERING;WADA, MASARU, C/O SONY CORPORATION |
| 分类号 |
H01L21/28;H01L21/203;H01L21/265;H01L21/285;H01L21/337;H01L21/338;H01L29/08;H01L29/45;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/28 |
| 代理机构 |
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