Method of fabricating a compound semiconductor device

摘要

A device fabrication method includes an etching step for compound III/V semiconductor materials such as gallium arsenide or indium phosphide. The step is carried out in the chamber of a growth reactor under conditions that are compatible with a subsequent growth step performed in the same reactor. Specifically, etching is performed in a so-called pulsed mode wherein each etching interval is followed by an interval in which etching is interrupted. Moreover, a Group III species such as indium is introduced into the chamber during each etching interval to enhance the smoothness of the etched surface.