Light-emitting device of gallium nitride compound semiconductor

摘要

A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n+ layer and a second electrode associated with a high-impurity density iH-layer. These electrodes are made up of a first Ni layer (110 ANGSTROM thick), a second Ni layer (1000 ANGSTROM thick), an Al layer (1500 ANGSTROM thick), a Ti layer (1000 ANGSTROM thick), and a third Ni layer (2500 ANGSTROM thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.