发明名称 High sensitivity improved photoelectric imaging device with a high signal to noise ratio
摘要 A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first FET and functions as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof. A read unit outputs, as an output signal, the source voltage of the source follower. The photoelectric transfer element is connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.
申请公布号 US5408113(A) 申请公布日期 1995.04.18
申请号 US19930082371 申请日期 1993.06.28
申请人 RICOH COMPANY, LTD.;RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS CO., LTD. 发明人 KANNO, TOHRU;SHINDOH, YASUYUKI;TERAO, NORIYUKI;NANJO, TAKESHI;OHIZUMI, ATSUHIRO;MAITA, YUTAKA
分类号 H01L27/146;H01L27/148;H04N3/15;(IPC1-7):H01L27/14;H01L31/00 主分类号 H01L27/146
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