发明名称 |
Superconducting device having a reduced thickness of oxide superconducting layer |
摘要 |
For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.
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申请公布号 |
US5407903(A) |
申请公布日期 |
1995.04.18 |
申请号 |
US19910766184 |
申请日期 |
1991.09.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAMURA, TAKAO;INADA, HIROSHI;IIYAMA, MICHITOMO |
分类号 |
H01L39/14;(IPC1-7):H01L39/22;H01B12/00 |
主分类号 |
H01L39/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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