发明名称 |
Method for fabricating a semiconductor device having a shallow doped region |
摘要 |
A method is provided for the formation of ultra-shallow boron doped regions in a semiconductor device. In one embodiment of the invention an N-type semiconductor substrate (15) is provided having a first P-type region formed therein. A dielectric layer (16) is formed on the substrate surface and a material layer (17) doped with fluorinated boron is formed on the dielectric layer (16). A second P-type region (22), characterized by a high dopant concentration at the substrate surface and a uniform junction profile, is formed in the substrate adjacent to the first P-type region by diffusing boron atoms from the material layer (17) through the dielectric layer (16) and into the substrate (15). The second P-type region (22) has a very shallow junction depth which is closer to the substrate surface than the first P-type region.
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申请公布号 |
US5407847(A) |
申请公布日期 |
1995.04.18 |
申请号 |
US19930124181 |
申请日期 |
1993.09.20 |
申请人 |
MOTOROLA INC. |
发明人 |
HAYDEN, JAMES D.;PFIESTER, JAMES R.;BURNETT, DAVID |
分类号 |
H01L21/225;H01L21/331;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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