发明名称 Method of forming a mask on a semiconductor substrate via photosensitive resin deposition, ammonia treatment and selective silylation
摘要 A photosensitive organic resin layer is formed on a semiconductor substrate. The resin layer is treated with ammonia before or after the resin layer is exposed. Then, the exposed organic resin layer is easily silylated. Due to the ammonia treatment, non-exposed portions of the organic resin layer is hardly silylated so that a high aspect ratio of patterning is realized.
申请公布号 US5407786(A) 申请公布日期 1995.04.18
申请号 US19920990822 申请日期 1992.12.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO, SHINISHI;OKANO, HARUO;NAKASE, MAKOTO
分类号 G03F7/26;(IPC1-7):G03F7/36;G03F7/38 主分类号 G03F7/26
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